The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 13, 2020 1:45 PM - 6:15 PM D419 (11-419)

Takashi Yasuda(Ishinomaki Senshu Univ.), Takumi Ikenoue(Kyoto Univ.)

4:15 PM - 4:30 PM

[13p-D419-9] Study on crystal and electronic structures of (GaxIn1-x)2O3 alloy system

Takeshi Hoga1,2, Akihiro Yamashita2,3, Toru Asahi3, Toyohiro Chikyow2, Takahiro Nagata2 (1.NIT (KOSEN), Tsuruoka College, 2.NIMS, 3.Waseda Univ.)

Keywords:Gallium oxide, Indium oxide, Structure control

本研究では、Nb添加SrTiO3(111)基板上に非平衡薄膜合成手法を用いて(GaxIn1-x)2O3固溶体薄膜を作製し、膜内部における電気的特性の評価を行った。その結果、固溶体形成による電子物性制御の可能性を示す結果を得たので報告する。