Estimation of thermal resistance of β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode packages fabricated by flip chip bonding technique

Shinya Yamaguchi; Nobuo Machida; Akio Takatsuka; Fumio Otsuka; Kohei Sasaki; Akito Kuramata

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 13, 2020 1:45 PM - 6:15 PM D419 (11-419)

Takashi Yasuda(Ishinomaki Senshu Univ.), Takumi Ikenoue(Kyoto Univ.)

5:00 PM - 5:15 PM

[13p-D419-12] Estimation of thermal resistance of β-Ga₂O₃ Schottky barrier diode packages fabricated by flip chip bonding technique

〇Shinya Yamaguchi¹, Nobuo Machida¹, Akio Takatsuka¹, Fumio Otsuka¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology, Inc.)

Keywords:Ga2O3, Thermal resistance, Flip chip bonding technique

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Presentation information

[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-12] Estimation of thermal resistance of β-Ga2O3 Schottky barrier diode packages fabricated by flip chip bonding technique

[13p-D419-12] Estimation of thermal resistance of β-Ga₂O₃ Schottky barrier diode packages fabricated by flip chip bonding technique