Epitaxial growth of γ-(AlxGa1-x)2O3 alloy thin films by mist chemical vapor deposition

Ryuto Horie; Daisuke Tahara; Hiroyuki Nishinaka; Masahiro Yoshimoto

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 13, 2020 1:45 PM - 6:15 PM D419 (11-419)

Takashi Yasuda(Ishinomaki Senshu Univ.), Takumi Ikenoue(Kyoto Univ.)

2:45 PM - 3:00 PM

[13p-D419-4] Epitaxial growth of γ-(Al_xGa_1-x)₂O₃ alloy thin films by mist chemical vapor deposition

〇Ryuto Horie¹, Daisuke Tahara¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

Keywords:wide-bandgap semiconductor, Gallium Oxide, mist CVD

« Previous in this session
Next in this session »

▲

Presentation information

[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-4] Epitaxial growth of γ-(AlxGa1-x)2O3 alloy thin films by mist chemical vapor deposition

[13p-D419-4] Epitaxial growth of γ-(Al_xGa_1-x)₂O₃ alloy thin films by mist chemical vapor deposition