Influence of wettability of surface modified gate insulator on electrical properties of amorphous In<sub>2</sub>O<sub>3 </sub>thin-film transistors

Keisuke Sasaki; Keisuke Nakamura; Shinya Aikawa

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Poster presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-PA5-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Mar 15, 2020 9:30 AM - 11:30 AM PA5 (PA)

9:30 AM - 11:30 AM

[15a-PA5-3] Influence of wettability of surface modified gate insulator on electrical properties of amorphous In₂O₃thin-film transistors

〇(B)Keisuke Sasaki¹, Keisuke Nakamura¹, Shinya Aikawa¹ (1.kougakuin univ.)

Keywords:Thin film transistor

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Presentation information

[15a-PA5-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-PA5-3] Influence of wettability of surface modified gate insulator on electrical properties of amorphous In2O3 thin-film transistors

[15a-PA5-3] Influence of wettability of surface modified gate insulator on electrical properties of amorphous In₂O₃thin-film transistors