[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-14] High breakdown voltage MOS capacitor fabricated on the β-Ga₂O₃ epitaxial layer with low donor concentration

〇Daiki Wakimoto¹, Kouhei Sasaki¹, Hironobu Miyamoto¹, Quang Tu Thieu¹, Akito Kuramata¹, Shigenobu Yamakosi¹ (1.Novel Crystal Technology)

Keywords:gallium oxide, MOS capacitance, HVPE

We are studying a low-concentration and thick-film drift layer to realize a vertical trench MOS transistor with a breakdown voltage of 10 kV class and low on-resistance. This time, as a basic experiment, we investigate the dependence of the breakdown voltage on the donor concentration in the planar MOS structure that simulates the bottom of the trench, and report that the expected improvement in the breakdown voltage was observed by lowering the donor concentration.