[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-15] High Temperature Operation of Normally-off β-Ga₂O₃ MOSFET

〇Yuuki Uchida¹, Tadashi Kase¹, Kazuo Aoki¹, Shigenobu Yamakoshi¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

Keywords:beta-Ga2O3, MOSFET, Normally-off

β-Ga₂O₃ has wide bandgap of 4.5eV. Near future, it is expected that β-Ga₂O₃ will be candidate of semiconductor devices with high temperatures operation of 250℃ or higher which is difficult by Si. This time, we will show normally-off β-Ga₂O₃ MOSFET with high temperature operation.