[12a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-D419-2] [Highlight]Electronic structure of interstitial hydrogen in wide gap semi-conductor InGaZnO₄

〇Masatoshi Hiraishi¹, Kenji Kojima², Hirotaka Okabe¹, Akihiro Koda^1,3, Ryosuke Kadono^1,3, Keisuke Ide⁴, Satoru Matsuishi⁵, Hideya Kumomi⁵, Toshio Kamiya^4,5, Hideo Hosono^4,5 (1.KEK-IMSS, 2.TRIUMF, 3.Sokendai, 4.Tokyo Tech MSL, 5.MCES)

Keywords:IGZO, muon, hydrogen

We performed Muon-Spin-Rotation experiment to investigate the electronic structure of impurity hydrogen in InGaZnO₄ (IGZO). Muon (Mu) in a matter can be regarded as the pseudo-hydrogen. We revealed that muon may locate the bonding center of Zn-O in the as-deposited crystalline IGZO and amorphous IGZO. However, muon in hydrogen-charged amorphous IGZO may tend to form a Mu^--H^- complex in the oxygen vacancy.