[13a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13a-D419-11] Characterization of 2-inch Diameter β-Ga₂O₃ Crystals Growth by the VB Technique

〇(M1)Kodai Onozuka¹, Tsuyoshi Kobayashi¹, Toshinori Taishi¹, Keigo Hoshikawa^1,2, Etsuko Ohba², Takumi Kobayashi² (1.Shinshu Univ., 2.Fujikoshi Machin. Co.)

Keywords:beta-Ga2O3, dislocation density, FWHM

Characterization of VB-grown 2inch β-Ga₂O₃ Crystals Growth were investigation by X-ray diffraction and etchpit technique.
It was found that etchpit density in crystals corresponded to results of FWHM.