The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 13, 2020 9:00 AM - 12:15 PM D419 (11-419)

Kentaro Kaneko(Kyoto Univ.)

12:00 PM - 12:15 PM

[13a-D419-12] Semiconductor Properties of β-Ga2O3 Crystals Grown by the VB Technique in Ambient Air

〇(M1)Mamoru Takabe1, Tsuyoshi Kobayashi1, Toshinori Taishi1, Keigo Hoshikawa1,2, Etsuko Ohba2, Takumi Kobayashi2 (1.Shinshu Univ., 2.Fujikoshi Machinery.Co.)

Keywords:beta-Ga2O3, electric properties, carrier concentration

Electric properties of VB-grown 2 inch β-Ga2O3 crystals were measured and compared with impurity concentration in crystals. It was found that activity of dopants decreased with increasing dopant concentrations in crystals.