The 67th JSAP Spring Meeting 2020

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Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 13, 2020 1:45 PM - 6:15 PM D419 (11-419)

Takashi Yasuda(Ishinomaki Senshu Univ.), Takumi Ikenoue(Kyoto Univ.)

2:15 PM - 2:30 PM

[13p-D419-2] Phase Stability of α-(AlxGa1-x)2O3 Films Grown on C-Plane Sapphire Substrates

〇(D)Riena Jinno1, Yasuhisa Masuda1, Kentaro Kaneko1, Shizuo Fujita1 (1.Kyoto Univ.)

Keywords:Ultra-wide bandgap semiconductor, Gallium oxide, Phase transition

Corundum (AlxGa1-x)2O3, which is one of ultra-wide bandgap materials (Eg>3.4eV), has attracted much interest as a material for power devices. In this study, the crystal phase stability of corundum (AlxGa1-x)2O3 films on c-plane sapphire against thermal treatment is studied.