[13a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13a-D419-7] Investigation of Etching Characteristics of HVPE-In₂O₃ Layers by Hydrogen-Environment Anisotropic Thermal Etching

〇Rie Togashi¹, Ryo Kasaba¹, Yuki Ooe¹, Kenta Nagai², Ken Goto², Yoshinao Kumagai², Akihiko Kikuchi¹ (1.Sophia Univ., 2.Tokyo Univ. of Agri. and Tech.)

Keywords:oxide semiconductor, etching, thermodynamic analysis