[12a-D519-1~9] 15.5 Group IV crystals and alloys

[12a-D519-5] In-Depth Analysis of Sn-Doped Ge/Insulator Grown by Interface-Modulated Solid-Phase Crystallization

〇Masanori Chiyozono¹, Xiangsheng Gong², Chang Xu², Taizoh Sadoh² (1.Kyushu Univ, 2.Kyushu Univ.)

Keywords:semiconductor, germanium tin

Previously, we investigated solid-phase crystallization of Sn-doped Ge / insulator, and found that carrier mobility of Sn-doped poly-Ge thin-films (≤ 50nm) improves by inserting of a-Si under layer. However, carrier mobility decreased by decreasing film thickness. In the present study, we investigate the reason for the decrese of the carrier mobility.