The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[12a-D519-1~9] 15.5 Group IV crystals and alloys

Thu. Mar 12, 2020 10:00 AM - 12:15 PM D519 (11-519)

Katsunori Makihara(Nagoya Univ.)

11:15 AM - 11:30 AM

[12a-D519-6] Low-Temperature Solid-Phase Growth Characteristics of Thin-Film SiSn on Insulator

Tomohiro Kosugi1, Yagi Kazuki2, Sadoh Taizoh2 (1.Kyushu Univ, 2.Kyushu Univ.)

Keywords:semiconductor, silicon tin

For enhancement of integrated circuit performance, it is important to employ new functional materials such as SixGe1-x-ySny, because it has superior properties compared with Si. In the present study, low-temperature solid-phase growth characteristics of SiSn thin-films on insulator.