Oral presentation

[12a-D519-1~9] 15.5 Group IV crystals and alloys

Thu. Mar 12, 2020 10:00 AM - 12:15 PM D519 (11-519)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

[12a-D519-1] Analysis of optical spectra for intermediate stage of 3D Ge films growth on SiO₂

〇Housei Akazawa¹ (1.NTT Device Innovation Center)

10:15 AM - 10:30 AM

[12a-D519-2] In-situ observation of Si-based alloy epitaxial growth using printing and firing

〇Keisuke Fukuda¹, Masahiro Nakahara², Shogo Fukami¹, Satoru Miyamoto¹, Marwan Dhamrin², Kensaku Maeda³, Kozo Fujiwara³, Noritaka Usami¹ (1.Nagoya Univ., 2.Toyo Alminium, 3.Tohoku Univ.)

10:30 AM - 10:45 AM

[12a-D519-3] Precursor heating effects in solid-phase crystallization for Si thin film on an insulator

〇Takuto Mizoguchi¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

10:45 AM - 11:00 AM

[12a-D519-4] Low-Temperature Formation of n-type Ge/Insulator by Bi-Induced Layer Exchange Crystallization

〇SEN LIU¹, XIANGSHENG GONG¹, HONGMIAO GAO¹, TAIZOH SADOH¹ (1.Kyushu Univ.)

11:00 AM - 11:15 AM

[12a-D519-5] In-Depth Analysis of Sn-Doped Ge/Insulator Grown by Interface-Modulated Solid-Phase Crystallization

〇Masanori Chiyozono¹, Xiangsheng Gong², Chang Xu², Taizoh Sadoh² (1.Kyushu Univ, 2.Kyushu Univ.)

11:15 AM - 11:30 AM

[12a-D519-6] Low-Temperature Solid-Phase Growth Characteristics of Thin-Film SiSn on Insulator

〇Tomohiro Kosugi¹, Yagi Kazuki², Sadoh Taizoh² (1.Kyushu Univ, 2.Kyushu Univ.)

11:30 AM - 11:45 AM

[12a-D519-7] Solid phase crystallization of ultra-thin Ge₁₋_xSn_x layers on insulators

〇(B)Ryo Oishi¹, Osamu Nakatsuka^1,2, Masashi Kurosawa^1,3 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.IAR Nagoya Univ.)

11:45 AM - 12:00 PM

[12a-D519-8] Segregation controlled rapid-melting growth of Ge_1−xSn_x wires ~ Efects of cooling rate ~

〇Takaya Nakao¹, Taiki Nishijima², Satoshi Shimizu², Isao Tsunoda², Osamu Nakatsuka^1,3, Masashi Kurosawa^1,4 (1.Nagoya Univ., 2.NIT, Kumamoto College., 3.IMaSS, Nagoya Univ., 4.IAR, Nagoya Univ.)

12:00 PM - 12:15 PM

[12a-D519-9] Fabrication of PIN Diode with High-quality Single-crystal GeSn Wire and Electroluminescence Characterization

〇Takayoshi Shimura¹, Youki Wada¹, Takuji Hosoi¹, Heiji Watanabe¹ (1.Osaka Univ.)

Oral presentation

[12p-D519-1~10] 15.5 Group IV crystals and alloys

Thu. Mar 12, 2020 1:45 PM - 4:15 PM D519 (11-519)

Taizoh Sadoh(Kyushu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [12p-D519-1] Evaluation of Thermal Expansion Coefficient in Ge_1-xSn_x Mesa Structure Using Reciprocal Space Mapping

〇(M2)Yuki Takahashi¹, Ryo Yokogawa^1,2, Kazutoshi Yoshioka¹, Gai Ogasawara¹, Ichiro Hirosawa³, Kohei Suda¹, Atsushi Ogura^1,4 (1.Meiji Univ., 2.JSPS Research Fellow DC, 3.Japan Synchrotron Radiation Research Institute (JASRI), 4.Meiji Renewable Energy Lbs.)

2:00 PM - 2:15 PM

[12p-D519-2] Investigation of Distributions of Interatomic distances in Ge_1-xSn_x Mesa Structures
by Reciprocal Space Mapping

〇Ichiro Hirosawa¹, Yuki Takahashi², Kazutoshi Yoshioka², Ryo Yokogawa^2,3, Kohei Suda², Atsushi Ogura² (1.JASRI, 2.Meiji Univ., 3.JSPS Research Fellow DC)

2:15 PM - 2:30 PM

△ [12p-D519-3] Depth-resolved tomographic analysis of high-Ge-content SiGe/compositionally graded SiGe/Si stacked structure using nanobeam X-ray diffraction

〇Kazuki Shida¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Kazushi Sumitani², Yasuhiko Imai², Shigeru Kimura², Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.JASRI)

2:30 PM - 2:45 PM

△ [12p-D519-4] Evaluation of Temperature and Ge Concentration Dependence of EXAFS Oscillations in Low Ge Concentration SiGe Thin Films

〇Kazutoshi Yoshioka¹, Ryo Yokogawa^1,2, Yuki Takahashi¹, Masato Koharada¹, Haruki Takeuchi¹, Gai Ogasawara¹, Ichiro Hirosawa³, Takeshi Watanabe³, Atsushi Ogura^1,4 (1.Meiji Univ., 2.JSPS Research Fellow DC2, 3.JASRI, 4.Meiji Renewable Energy Lbs.)

2:45 PM - 3:00 PM

[12p-D519-5] Investigation of Strain-Shift Coefficients for Si_1-xSn_x by UV Raman Spectroscopy

〇Ryo Yokogawa^1,2, Ryuji Tange³, Masashi Kurosawa^3,4, Atsushi Ogura^1,5 (1.Meiji Univ., 2.JSPS Research Fellow DC, 3.Grad. Sch. of Eng., Nagoya Univ., 4.IAR, Nagoya Univ., 5.MREL)

3:00 PM - 3:15 PM

△ [12p-D519-6] Suppression of crack formation in strained SiGe layer by patterning of Ge-on-Si substrates

〇Youya Wagatsuma¹, Md. Mahfuz Alam^1,2, Kazuya Okada¹, Yusuke Hoshi¹, Michihiro Yamada³, Kohei Hamaya³, Kentarou Sawano¹ (1.Adv. Res. Lab., Tokyo City Univ., 2.Univ. of Barishal, 3.CSRN, Osaka Univ.)

3:15 PM - 3:30 PM

△ [12p-D519-7] Strain Evaluation in Si_1-x-yGe_xSn_y Layers on Si Substrate Fabricated by Ion Implantation and Laser Anealing

〇Gai Ogasawara¹, Shota Komago¹, Ryo Yokogawa^1,2, Kazutoshi Yoshioka¹, Naomi Sawamoto¹, John Borland³, Takashi Kuroi⁴, Yoji Kawasaki⁵, Atsushi Ogura^1,6 (1.Meiji Univ, 2.JSPS Research Fellow DC, 3.J.O.B. Technologies, 4.Nissin Ion Equipment, 5.Sumitomo Heavy Industries Ion Technology, 6.Meiji Renewable Energy Lbs)

3:30 PM - 3:45 PM

[12p-D519-8] Influences of thermal annealing after bonding on GOI fabrication

〇Shogo Shibata¹, Ryosuke Ishikawa¹, Yusuke Hoshi¹, Kentaro Sawano¹ (1.Adv.Res.Lab.TokyoCityUniv.)

3:45 PM - 4:00 PM

[12p-D519-9] Crystallization of RF Sputtered Ge Thin Films on Sapphire(0001)

〇Hibiki Sugawa¹, Akio Ohta¹, Masato Kobayashi¹, Noriyuki Taoka¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

4:00 PM - 4:15 PM

[12p-D519-10] Formation of Ultrathin Ge Crystal on Al/Ge(111) by Control of Ge Segregation

〇Masato Kobayashi¹, Akio Ohta¹, Noriyuki Taoka¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

Poster presentation

[13p-PA6-1~2] 15.5 Group IV crystals and alloys

Fri. Mar 13, 2020 1:30 PM - 3:30 PM PA6 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[13p-PA6-1] Formation of Ge/GeSiSn heterostructure by sputter epitaxy method

〇Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Toshiaki Matsui², Yoshiyuki Suda³ (1.Univ. Electro-comm., 2.NICT, 3.Tokyo Univ. Agric. Technol.)

1:30 PM - 3:30 PM

[13p-PA6-2] Si Layer Growth on Epitaxial Graphene using MF2DS

〇(M1)Riku Shamoto¹, Ryuichi Hirai¹, Akihiro Hashimoto¹ (1.Univ of Fukui)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[12a-D519-1~9] 15.5 Group IV crystals and alloys

[12a-D519-1] Analysis of optical spectra for intermediate stage of 3D Ge films growth on SiO₂

[12a-D519-2] In-situ observation of Si-based alloy epitaxial growth using printing and firing

[12a-D519-3] Precursor heating effects in solid-phase crystallization for Si thin film on an insulator

[12a-D519-4] Low-Temperature Formation of n-type Ge/Insulator by Bi-Induced Layer Exchange Crystallization

[12a-D519-5] In-Depth Analysis of Sn-Doped Ge/Insulator Grown by Interface-Modulated Solid-Phase Crystallization

[12a-D519-6] Low-Temperature Solid-Phase Growth Characteristics of Thin-Film SiSn on Insulator

[12a-D519-7] Solid phase crystallization of ultra-thin Ge₁₋_xSn_x layers on insulators

[12a-D519-8] Segregation controlled rapid-melting growth of Ge_1−xSn_x wires ~ Efects of cooling rate ~

[12a-D519-9] Fabrication of PIN Diode with High-quality Single-crystal GeSn Wire and Electroluminescence Characterization

[12p-D519-1~10] 15.5 Group IV crystals and alloys

△ [12p-D519-1] Evaluation of Thermal Expansion Coefficient in Ge_1-xSn_x Mesa Structure Using Reciprocal Space Mapping

[12p-D519-2] Investigation of Distributions of Interatomic distances in Ge_1-xSn_x Mesa Structures
by Reciprocal Space Mapping

△ [12p-D519-3] Depth-resolved tomographic analysis of high-Ge-content SiGe/compositionally graded SiGe/Si stacked structure using nanobeam X-ray diffraction

△ [12p-D519-4] Evaluation of Temperature and Ge Concentration Dependence of EXAFS Oscillations in Low Ge Concentration SiGe Thin Films

[12p-D519-5] Investigation of Strain-Shift Coefficients for Si_1-xSn_x by UV Raman Spectroscopy

△ [12p-D519-6] Suppression of crack formation in strained SiGe layer by patterning of Ge-on-Si substrates

△ [12p-D519-7] Strain Evaluation in Si_1-x-yGe_xSn_y Layers on Si Substrate Fabricated by Ion Implantation and Laser Anealing

[12p-D519-8] Influences of thermal annealing after bonding on GOI fabrication

[12p-D519-9] Crystallization of RF Sputtered Ge Thin Films on Sapphire(0001)

[12p-D519-10] Formation of Ultrathin Ge Crystal on Al/Ge(111) by Control of Ge Segregation

[13p-PA6-1~2] 15.5 Group IV crystals and alloys

[13p-PA6-1] Formation of Ge/GeSiSn heterostructure by sputter epitaxy method

[13p-PA6-2] Si Layer Growth on Epitaxial Graphene using MF2DS

Authentication

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[12a-D519-1~9] 15.5 Group IV crystals and alloys

[12p-D519-1~10] 15.5 Group IV crystals and alloys

△ [12p-D519-1] Evaluation of Thermal Expansion Coefficient in Ge1-xSnx Mesa Structure Using Reciprocal Space Mapping

△ [12p-D519-3] Depth-resolved tomographic analysis of high-Ge-content SiGe/compositionally graded SiGe/Si stacked structure using nanobeam X-ray diffraction

△ [12p-D519-4] Evaluation of Temperature and Ge Concentration Dependence of EXAFS Oscillations in Low Ge Concentration SiGe Thin Films

△ [12p-D519-6] Suppression of crack formation in strained SiGe layer by patterning of Ge-on-Si substrates

△ [12p-D519-7] Strain Evaluation in Si1-x-yGexSny Layers on Si Substrate Fabricated by Ion Implantation and Laser Anealing

[13p-PA6-1~2] 15.5 Group IV crystals and alloys

Authentication

△ [12p-D519-1] Evaluation of Thermal Expansion Coefficient in Ge_1-xSn_x Mesa Structure Using Reciprocal Space Mapping

△ [12p-D519-7] Strain Evaluation in Si_1-x-yGe_xSn_y Layers on Si Substrate Fabricated by Ion Implantation and Laser Anealing