[12p-D519-1~10] 15.5 Group IV crystals and alloys

△ [12p-D519-6] Suppression of crack formation in strained SiGe layer by patterning of Ge-on-Si substrates

〇Youya Wagatsuma¹, Md. Mahfuz Alam^1,2, Kazuya Okada¹, Yusuke Hoshi¹, Michihiro Yamada³, Kohei Hamaya³, Kentarou Sawano¹ (1.Adv. Res. Lab., Tokyo City Univ., 2.Univ. of Barishal, 3.CSRN, Osaka Univ.)

Keywords:Ge, SiGe