Evaluation of Temperature and Ge Concentration Dependence of EXAFS Oscillations in Low Ge Concentration SiGe Thin Films

Kazutoshi Yoshioka; Ryo Yokogawa; Yuki Takahashi; Masato Koharada; Haruki Takeuchi; Gai Ogasawara; Ichiro Hirosawa; Takeshi Watanabe; Atsushi Ogura

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[12p-D519-1~10] 15.5 Group IV crystals and alloys

Thu. Mar 12, 2020 1:45 PM - 4:15 PM D519 (11-519)

Taizoh Sadoh(Kyushu Univ.)

2:30 PM - 2:45 PM

△ [12p-D519-4] Evaluation of Temperature and Ge Concentration Dependence of EXAFS Oscillations in Low Ge Concentration SiGe Thin Films

〇Kazutoshi Yoshioka¹, Ryo Yokogawa^1,2, Yuki Takahashi¹, Masato Koharada¹, Haruki Takeuchi¹, Gai Ogasawara¹, Ichiro Hirosawa³, Takeshi Watanabe³, Atsushi Ogura^1,4 (1.Meiji Univ., 2.JSPS Research Fellow DC2, 3.JASRI, 4.Meiji Renewable Energy Lbs.)

Keywords:SiGe, EXAFS, Einstein temperature