[12a-PA2-1~77] 17 Nanocarbon Technology

[12a-PA2-56] Graphite/Graphene growth from amorphous carbon thin film as a solid source
- Growth on iron silicides using the SOI substrate -

〇(M2)SUPISSARA RUANGWIT¹, Fumihiko Maeda¹ (1.Fukuoka Institute)

Keywords:graphnene

We have studied graphene growth using amorphous carbon thin film by a simple method derived from chemical vapor deposition (CVD). Previously, we found that thick oxides on the surface disturb the growth if we used metal foils. Then, we used Fe thin film formed on Si substrate to reduce Iron oxide and found that most of the area on the surface was covered by graphite. In this study, we tried to grow the graphene on the Fe thin films, which are formed directly on the Si single crystal by using an SOI substrate where the oxide layer was formed under the Si crystal layer. Here, it was considered that the Fe film remained even after heating, and that graphene could be grown. In addition, the structure, that graphene is directly formed on a semiconductor, can be realized if β-FeSi₂ can be obtained after growth. As a result, it was found that graphite growth was possible using SOI substrate even if Fe film was formed directly on Si.