[12a-PB4-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

▲ [12a-PB4-13] Dependence of Thermal Boundary Resistance on Depositing Gas Ratio and Temperature at the Interface of Ru/TiN/SiO₂ and Ru/Al₂O₃/SiO₂

〇(M2)Ma Shuaizhe¹, Tianzhuo Zhan¹, Zhicheng Jin¹, Motohiro Tomita¹, Yen-Ju Wu², Yibin Xu², Takashi Matsukawa³, Takeo Matsuki^3,1, Takanobu Watanabe¹ (1.Waseda Univ., 2.National Institute for Materials Science, 3.National Institute of Advanced Industrial Science and Technology)

Keywords:Ru interconnects, Thermal Boundary Resistance

Because thermal energy is conducted in different ways in metals and non-metals, there is thermal boundary resistance (TBR) between the metal and the interconnects. We prepared a sample of Ru / TiN / SiO₂ and Ru / Al₂O₃ / SiO₂. We changed the gas ratio and temperature during the preparation process and we found it changes the TBR of the sample. But for different interfaces, the changing trend and degree of TBR are not consistent. For oxides adhesive layers, the sample has a better crystal structure and the TBR has some positive changes. But for nitride adhesive layers, the TBR has some negative changes. The reason why it happens is still under our considering.