2020年第67回応用物理学会春季学術講演会

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一般セッション(ポスター講演)

13 半導体 » 13.5 デバイス/配線/集積化技術

[12a-PB4-1~13] 13.5 デバイス/配線/集積化技術

2020年3月12日(木) 09:30 〜 11:30 PB4 (第1体育館)

09:30 〜 11:30

[12a-PB4-13] Dependence of Thermal Boundary Resistance on Depositing Gas Ratio and Temperature at the Interface of Ru/TiN/SiO2 and Ru/Al2O3/SiO2

〇(M2)Ma Shuaizhe1、Tianzhuo Zhan1、Zhicheng Jin1、Motohiro Tomita1、Yen-Ju Wu2、Yibin Xu2、Takashi Matsukawa3、Takeo Matsuki3,1、Takanobu Watanabe1 (1.Waseda Univ.、2.National Institute for Materials Science、3.National Institute of Advanced Industrial Science and Technology)

キーワード:Ru interconnects, Thermal Boundary Resistance

Because thermal energy is conducted in different ways in metals and non-metals, there is thermal boundary resistance (TBR) between the metal and the interconnects. We prepared a sample of Ru / TiN / SiO2 and Ru / Al2O3 / SiO2. We changed the gas ratio and temperature during the preparation process and we found it changes the TBR of the sample. But for different interfaces, the changing trend and degree of TBR are not consistent. For oxides adhesive layers, the sample has a better crystal structure and the TBR has some positive changes. But for nitride adhesive layers, the TBR has some negative changes. The reason why it happens is still under our considering.