[12p-A205-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[12p-A205-10] An investigation of novel gases for etching process by computational chemistry

〇Toshio Hayashi¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya University)

Keywords:Semiconductor process, Etching, Novel gases

Perfluorocarbon, Hydrofluorocarbon, Hydrofluoroether, SF₆, NF₃ and others have been used as etching gases. However, novel alternative gases are thought to be. Therefore, we investigate the favorable candidate gases by computational chemistry. In this stage, we propose the CF₃NH₂ and CF₃NO as the candidates, because CF₃NH₂ dissociates to CF₂NH₂⁺ + F in the ionization process and to CF₂NH₂ + F in the excitation process, and CF₃NO dissociates to CF₃⁺ + NO in the ionization process and CF₃ + NO in the excitation process. These fragmented species have highly reactivity and may be useful as the etchants and deposition species.