[12p-A205-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

▼ [12p-A205-12] Surface fluorination of Y₂O₃ irradiated by low energy F⁺ ion and F radical

〇(M1)Hojun Kang¹, Tomoko Ito¹, Junghwan Um², Hikaru Kokura², Taekyun Kang², Sungil Cho², Hyunjung Park², Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Samsung Electronics)

Keywords:Yttria, Fluorine

Modification of Y₂O₃ coated walls of a process chamber during fluorine-based plasma operation is of interest to chip manufactures using such processing tools. In this study, effects of low energy F⁺ ion and fluorine radical irradiation on Y₂O₃ were examined with the use of ion beam experiments and XeF₂ exposure experiments. It has been found that chemical bonding states of yttrium on the surface depend on the incident F⁺ ion energy. The ion beam experiments result indicates that YF₃ and YO_xF_y/YF_x was formed on Y₂O₃ film surface by low energy incident F⁺ ions. However, fluorine radical exposure does not form YF₃ layer on the Y₂O₃ surface. It indicates that conditioning of wall require the energy of incident ions.