2020年第67回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

8 プラズマエレクトロニクス » 8.2 プラズマ成膜・エッチング・表面処理

[12p-A205-1~15] 8.2 プラズマ成膜・エッチング・表面処理

2020年3月12日(木) 13:45 〜 18:00 A205 (6-205)

太田 貴之(名城大)、深沢 正永(ソニーセミコンダクタソリューションズ)、岩瀬 拓(日立製作所)

17:00 〜 17:15

[12p-A205-12] Surface fluorination of Y2O3 irradiated by low energy F+ ion and F radical

〇(M1)Hojun Kang1、Tomoko Ito1、Junghwan Um2、Hikaru Kokura2、Taekyun Kang2、Sungil Cho2、Hyunjung Park2、Kazuhiro Karahashi1、Satoshi Hamaguchi1 (1.Osaka Univ.、2.Samsung Electronics)

キーワード:Yttria, Fluorine

Modification of Y2O3 coated walls of a process chamber during fluorine-based plasma operation is of interest to chip manufactures using such processing tools. In this study, effects of low energy F+ ion and fluorine radical irradiation on Y2O3 were examined with the use of ion beam experiments and XeF2 exposure experiments. It has been found that chemical bonding states of yttrium on the surface depend on the incident F+ ion energy. The ion beam experiments result indicates that YF3 and YOxFy/YFx was formed on Y2O3 film surface by low energy incident F+ ions. However, fluorine radical exposure does not form YF3 layer on the Y2O3 surface. It indicates that conditioning of wall require the energy of incident ions.