[12p-A305-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[12p-A305-11] Improvement of Set-voltage Variability of Cu Atom Switch with Split-electrode

〇Naoki Banno¹, Koichiro Okamoto¹, Hideaki Numata¹, Noriyuki Iguchi¹, Toshitsugu Sakamoto¹, Munehiro Tada¹ (1.NEC Corp.)

Keywords:nonvolatile memory, atom switch, FPGA

3x improvement of set-voltage (V_set) variability of Cu atom switches (ASs) is realized by a split-electrode. The split-electrode makes the switches parallel and the switch with the smallest V_set is automatically selected to turn ON, resulting in smaller V_set variability. The split-electrode of 2-in-1 without area-overhead successfully reduces 6σ of V_set from 2.56V to 2.25V with an equivalent σV_set=28mV. The developed split-electrode enables the large scale integration of ASs for embedded memory and FPGA used in ultra-low power SoC.