[12p-A305-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[12p-A305-13] Temperature dependence of electrical conduction for O₂-annealed TaO_x ReRAM

〇(M1C)Soshun Doko¹, Masahiro Suzuki¹, Yoshiaki Ishii¹, Masahiro Moniwa¹ (1.Tokyo Univ. of Technology)

Keywords:ReRAM, Wearable, Low power

Resistive Random Access Memory (ReRAM) attracts much attention for low power application of IoT wearable edge devices.
In this study, in order to understand the electrical conduction mechanism by oxygen vacancies, conductance of the ReRAM was investigated as a function of temperature, and the correspondence with the O₂-annealing temperature was investigated. The activation energy increased with decrease of the annealing temperature. The conduction mechanism should be investigated precisely from various viewpoints including possible microstructure change.