[12p-A305-1~13] 13.5 デバイス／配線／集積化技術

▼ [12p-A305-2] Detection of Charge Traps in Silicon Nanowire MOSFETs Using Transient Current Measurements

〇(M2)Boyang Cui¹、Tomoko Mizutani¹、Kiyoshi Takeuchi¹、Takuya Saraya¹、Masaharu Kobayashi¹、Masaharu Kobayashi^1,2、Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo、2.d.lab,Univ of Tokyo)

キーワード：random telegraph noise, nanowire, gate-all-around FET

RTN due to charge traps has attracted more and more attention, since it has been regarded as a major issue in scaled transistors. With MOS device scaling, the amplitude of RTN increase rapidly. For better predict RTN impacts on devices and circuits, RTN amplitude distribution should be investigated in detail. However, traditional measurement methods require long measurement times. To detect more RTNs in a limited number of samples with shorter time, transient current measurement methods have been proposed. In this study, the transient method is applied to the charge trap detection in nanowire MOSFETs.