The 67th JSAP Spring Meeting 2020

Presentation information

Symposium (Oral)

Symposium » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Frontiers in defect physics: Merging characterization and theory-

[12p-A307-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Frontiers in defect physics: Merging characterization and theory-

Thu. Mar 12, 2020 1:30 PM - 5:30 PM A307 (6-307)

Yoshihiro Ishitani(Chiba Univ.), Akira Sakai(Osaka Univ.)

3:00 PM - 3:15 PM

[12p-A307-4] Ga adatom behavior on GaN nonplanar facets during metalorganic vapor phase epitaxy

Yuki Seta1, Toru Akiyama1, Abdul-Muizz Pradipto1, Kohji Nakamura1, Tomonori Ito1 (1.Mie Univ.)

Keywords:Nitride semiconductor, facet controll