[12p-A307-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Frontiers in defect physics: Merging characterization and theory-

[12p-A307-4] Ga adatom behavior on GaN nonplanar facets during metalorganic vapor phase epitaxy

〇Yuki Seta¹, Toru Akiyama¹, Abdul-Muizz Pradipto¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

Keywords:Nitride semiconductor, facet controll