The 67th JSAP Spring Meeting 2020

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Symposium (Oral)

Symposium » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Frontiers in defect physics: Merging characterization and theory-

[12p-A307-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Frontiers in defect physics: Merging characterization and theory-

Thu. Mar 12, 2020 1:30 PM - 5:30 PM A307 (6-307)

Yoshihiro Ishitani(Chiba Univ.), Akira Sakai(Osaka Univ.)

3:15 PM - 3:30 PM

[12p-A307-5] Observation and Classification of Threading Dislocations in GaN Crystal Using Multiphoton-Excitation Photoluminescence and Etching

〇(B)Mayuko Tsukakoshi1, Tomoyuki Tanikawa1, Masahiro Uemukai1, Ryuji Katayama1 (1.Osaka univ.)

Keywords:Multiphoton-excitation photoluminescence, GaN, Threading dislocation