The 67th JSAP Spring Meeting 2020

Presentation information

Symposium (Oral)

Symposium » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Frontiers in defect physics: Merging characterization and theory-

[12p-A307-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Frontiers in defect physics: Merging characterization and theory-

Thu. Mar 12, 2020 1:30 PM - 5:30 PM A307 (6-307)

Yoshihiro Ishitani(Chiba Univ.), Akira Sakai(Osaka Univ.)

5:00 PM - 5:30 PM

[12p-A307-8] Study on Nitride Semiconductors Using Machine-Learning Potentials - Focusing on Phonon and Thermal Properties -

Satoshi Watanabe1,2, Masayoshi Ogura1, Koji Shimizu1, Emi Minamitani3 (1.UTokyo, 2.NIMS MaDIS, 3.IMS)

Keywords:nitride semiconductors, machine-learning potential, thermal conductivity

Aiming to analyze the effects of defects on properties of nitride semiconductors, we have been constructing interatomic potentials with the high-dimensional neural networks and density functional theory calculation data. In this talk, the present status of our study is presented focusing on the good agreement with the density functional theory calculations on phonon band structure and thermal conductivity of crystalline GaN, and the future prospects will be discussed.