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▼ [12p-A401-2] [Highlight]Chemically tuned p- and n-type WSe2 monolayers with higher carrier mobility for advanced electronics
Keywords:Chemical doping, Complementary inverter, p-n junction
Semiconducting transition metal dichalcogenides (TMDCs), such as WSe2 and MoS2, have been attracting great interest due to their superior and unique properties. Although both p- and n-type materials are required for their application in advanced electronics, most of semiconducting TMDCs exhibit n-type or ambipolar behavior. Therefore, several approaches have been reported to control the electrical polarity of semiconducting TMDCs, such as substitutional doping of transition metals and metal nanoparticle deposition. However, these methods have critical disadvantages, such as carrier scattering and photoluminescence quenching. As an alternative, chemical doping can be a promising method. Although the usefulness of chemical doping has been demonstrated, the controlled p- and n-type doping with a single TMDC material has not been reported so far.
In this work, we demonstrate the doping of CVD grown-WSe2 for selective conversion from ambipolar to p- or n-type semiconductors. This was done by using 4-nitrobenzenediazonium tetrafluoroborate (4-NBD) and diethylene triamine (DETA) molecules as p- or n-type dopants, respectively. After the doping process, WSe2 showed clear p- or n-type transport properties and the effective carrier mobility showed significant increase up to 103~104 times (Fig. 1). To demonstrate utilization of our chemically doped p- and n-type WSe2, a complementary metal-oxide-semiconductor inverter was fabricated which showed extremely low power consumption and high voltage gain (~10) (Fig. 2). Moreover, a p-n junction was fabricated within single WSe2 grain by spatially controlled doping technique, and it showed clear rectification behavior as well as optical response under laser illumination (Fig. 3).
In this work, we demonstrate the doping of CVD grown-WSe2 for selective conversion from ambipolar to p- or n-type semiconductors. This was done by using 4-nitrobenzenediazonium tetrafluoroborate (4-NBD) and diethylene triamine (DETA) molecules as p- or n-type dopants, respectively. After the doping process, WSe2 showed clear p- or n-type transport properties and the effective carrier mobility showed significant increase up to 103~104 times (Fig. 1). To demonstrate utilization of our chemically doped p- and n-type WSe2, a complementary metal-oxide-semiconductor inverter was fabricated which showed extremely low power consumption and high voltage gain (~10) (Fig. 2). Moreover, a p-n junction was fabricated within single WSe2 grain by spatially controlled doping technique, and it showed clear rectification behavior as well as optical response under laser illumination (Fig. 3).