[12p-A403-1~15] 16.3 Bulk, thin-film and other silicon-based solar cells

▼ [12p-A403-12] Effect of the tunnel oxide/AlO_x stacked hole-selective contacts on the junction properties at PEDOT:PSS/n-type Si interface

〇(D)Md Enamul Karim¹, Arifuzzaman Rajib¹, Yuki Nasuno¹, Tomofumi Ukai², Shunji Kurosu², Masahide Tokuda², Yasuhiko Fujii², Tatsuro Hanajiri², Ryo Ishikawa¹, Keiji Ueno¹, Hajime Shirai¹ (1.Saitama University, 2.Toyo University)

Keywords:ALD-Al2O3, XPS

Dopant-free carrier selective layer has attracted interest in the filed of Si photovoltaics. So far, we investigated the PEDOT: PSS/n-Si heterojunction solar cells using spin coat and chemical mist deposition (CMD) with a spin-coated carrier selective layer. However, the passivation quality at the PEDOT:PSS/n-Si contacts is still not clear including the junction properties. In this study, we investigated the effect of the tunnel oxide/AlO_x stacked hole-selective contacts on the junction properties at the PEDOT: PSS/n-type Si interface.