[12p-A403-1~15] 16.3 シリコン系太陽電池

▼ [12p-A403-12] Effect of the tunnel oxide/AlO_x stacked hole-selective contacts on the junction properties at PEDOT:PSS/n-type Si interface

〇(D)Md Enamul Karim¹、Arifuzzaman Rajib¹、Yuki Nasuno¹、Tomofumi Ukai²、Shunji Kurosu²、Masahide Tokuda²、Yasuhiko Fujii²、Tatsuro Hanajiri²、Ryo Ishikawa¹、Keiji Ueno¹、Hajime Shirai¹ (1.Saitama University、2.Toyo University)

キーワード：ALD-Al2O3, XPS

Dopant-free carrier selective layer has attracted interest in the filed of Si photovoltaics. So far, we investigated the PEDOT: PSS/n-Si heterojunction solar cells using spin coat and chemical mist deposition (CMD) with a spin-coated carrier selective layer. However, the passivation quality at the PEDOT:PSS/n-Si contacts is still not clear including the junction properties. In this study, we investigated the effect of the tunnel oxide/AlO_x stacked hole-selective contacts on the junction properties at the PEDOT: PSS/n-type Si interface.