[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

[12p-B401-11] AlGaN Donor Layer Thickness Dependence of Electric Characteristics of GaN-HEMTs

〇Hidemasa Takahashi¹, Yuji Ando¹, Ryohei Yamaguchi³, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Inst. of Technology)

Keywords:GaN, HEMT, Gallium nitride

We are developing Gated-Anode diodes using normally-off GaN-HEMTs to increase the power and efficiency of Rectenna.In this study, the dependence of the electrical characteristics of GaN-HEMT on SiC substrate on the thickness of AlGaN electron supply layer was investigated in order to obtain basic data for epi-design. The electrical characteristics of HEMT and comparison with theoretical value will be presented.