Operando measurement of hetero-interface potential distribution in GaN-HEMT using a Laser Terahertz Emission Microscope

Tokio Takahashi; Tatsuhiko Nishimura; Hidetoshi Nakanishi; Iwao Kawayama; Masayoshi Tonouchi; Mitsuaki Shimizu; Noriyuki Takada

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

Thu. Mar 12, 2020 1:15 PM - 5:30 PM B401 (2-401)

Masashi Kato(Nagoya Inst. of Tech.)

4:45 PM - 5:00 PM

[12p-B401-14] Operando measurement of hetero-interface potential distribution in GaN-HEMT using a Laser Terahertz Emission Microscope

〇Tokio Takahashi¹, Tatsuhiko Nishimura², Hidetoshi Nakanishi², Iwao Kawayama^3,4, Masayoshi Tonouchi³, Mitsuaki Shimizu¹, Noriyuki Takada¹ (1.AIST, 2.SCREEN, 3.ILE, Osaka Univ., 4.Kyoto Univ.)

Keywords:LTEM, GaN-HEMT

« Previous in this session
Next in this session »

▲