The 67th JSAP Spring Meeting 2020

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

Thu. Mar 12, 2020 1:15 PM - 5:30 PM B401 (2-401)

Masashi Kato(Nagoya Inst. of Tech.)

5:00 PM - 5:15 PM

[12p-B401-15] Impact of Film Stress of Field Plate Dielectric on Leakage Current of GaN-HEMTs

〇Yuji Ando1, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

Keywords:GaN, HEMT, Field plate

This paper reports systematic investigations into the influence of the mechanical stress of field-plate dielectric film on electric characteristics of GaN high electron mobility transistors (HEMTs).