The 67th JSAP Spring Meeting 2020

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

Thu. Mar 12, 2020 1:15 PM - 5:30 PM B401 (2-401)

Masashi Kato(Nagoya Inst. of Tech.)

1:45 PM - 2:00 PM

△ [12p-B401-3] Evaluation of N-polar AlGaN/GaN heterostructure selectively etched under NH3/H2 mixed atmosphere

〇Yuki Yoshiya1, Takuya Hoshi1, Hiroki Sugiyama1, Hideaki Matsuzaki1 (1.NTT Device Technology Labs)

Keywords:Gallium nitride, N-polar, selective thermal etching