The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

3 Optics and Photonics » 3.6 Ultrashort-pulse and high-intensity lasers

[12p-B415-1~14] 3.6 Ultrashort-pulse and high-intensity lasers

Thu. Mar 12, 2020 1:15 PM - 5:15 PM B415 (2-415)

Takasumi Tanabe(Keio Univ.), Eiji Takahashi(RIKEN)

3:00 PM - 3:15 PM

[12p-B415-7] The experiment and theoretical analysis of HHG in bulk GaAs using reflection geometry

Peiyu Xia1, Tomohiro Tamaya1, Faming Lu1, Teruto Kanai1, Nobuhisa Ishii1, Changsu Kim1, Hidefumi Akiyama1, Takeo Kato1, Jiro Itatani1 (1.ISSP, the Univ. of Tokyo)

Keywords:High harmonic generation, semiconductor, Gallium Arsenide

We found that the efficiency of high harmonic generation (HHG) above the band gap (1.4 eV) of GaAs did not only saturate monotonically, with increasing the drive-laser intensity. The yield of each high harmonic showed oscillatory behavior in the non-perturbative region. This phenomenon was qualitatively reproduced in the theoretical analysis based on the Luttinger-Kohn model. Comparing the experimental results and theoretical analysis, we discuss the strong-field-driven electron dynamics and the relevance to coherent destruction of tunneling in the electron excitation.