[12p-B415-1~14] 3.6 Ultrashort-pulse and high-intensity lasers

[12p-B415-7] The experiment and theoretical analysis of HHG in bulk GaAs using reflection geometry

〇Peiyu Xia¹, Tomohiro Tamaya¹, Faming Lu¹, Teruto Kanai¹, Nobuhisa Ishii¹, Changsu Kim¹, Hidefumi Akiyama¹, Takeo Kato¹, Jiro Itatani¹ (1.ISSP, the Univ. of Tokyo)

Keywords:High harmonic generation, semiconductor, Gallium Arsenide

We found that the efficiency of high harmonic generation (HHG) above the band gap (1.4 eV) of GaAs did not only saturate monotonically, with increasing the drive-laser intensity. The yield of each high harmonic showed oscillatory behavior in the non-perturbative region. This phenomenon was qualitatively reproduced in the theoretical analysis based on the Luttinger-Kohn model. Comparing the experimental results and theoretical analysis, we discuss the strong-field-driven electron dynamics and the relevance to coherent destruction of tunneling in the electron excitation.