The 67th JSAP Spring Meeting 2020

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Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-D215-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Mar 12, 2020 2:00 PM - 5:30 PM D215 (11-215)

Toshiyuki Kaizu(Kobe Univ.), Jun Tatebayashi(Osaka Univ.), Ryo Nakao(NTT)

4:45 PM - 5:00 PM

[12p-D215-10] Sensitivity characteristics of infrared photodetector utilizing InAs quantum dots and an Al0.3Ga0.7As/GaAs heterointerface

〇Shigeo Asahi1, Takahiko Murata1, Stefano Sanguinetti2, Takashi Kita1 (1.Kobe Univ., 2.Univ. Milano-Bicocca)

Keywords:InAs quantum dots, Infrared photodetector