[12p-D215-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-D215-11] Effects of exciton overlap on terahertz wave generation due to difference frequency mixing in GaAs/AlAs multiple quantum wells

〇Kanta Sakaue¹, Osamu Kojima¹, Takashi Kita¹, Richard Hogg² (1.Kobe Univ., 2.Univ. of Glasgow)

Keywords:Terahertz wave, difference frequency mixing, GaAs/AlAs multiple quantum wells

We have reported that terahertz wave due to difference frequency mixing in semiconductor multiple quantum well is enhanced under the exciton-excitation condition. To realize the enhancement of the terahertz wave in a wide frequency region, we focused on the overlap of the quantum wells with the different thicknesses. Therefore, in this work, we report the generation of terahertz wave in the multiple quantum wells with different thicknesses.