The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-D215-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Mar 12, 2020 2:00 PM - 5:30 PM D215 (11-215)

Toshiyuki Kaizu(Kobe Univ.), Jun Tatebayashi(Osaka Univ.), Ryo Nakao(NTT)

5:00 PM - 5:15 PM

[12p-D215-11] Effects of exciton overlap on terahertz wave generation due to difference frequency mixing in GaAs/AlAs multiple quantum wells

Kanta Sakaue1, Osamu Kojima1, Takashi Kita1, Richard Hogg2 (1.Kobe Univ., 2.Univ. of Glasgow)

Keywords:Terahertz wave, difference frequency mixing, GaAs/AlAs multiple quantum wells

We have reported that terahertz wave due to difference frequency mixing in semiconductor multiple quantum well is enhanced under the exciton-excitation condition. To realize the enhancement of the terahertz wave in a wide frequency region, we focused on the overlap of the quantum wells with the different thicknesses. Therefore, in this work, we report the generation of terahertz wave in the multiple quantum wells with different thicknesses.