[12p-D411-1~14] 6.3 Oxide electronics

△ [12p-D411-1] Initial characteristics and analog switching behaviors of VCM and ECM based Ta₂O_5-δ resistive memories

〇Yuanlin Li¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Takashi Morie² (1.Hokkaido Univ., 2.Kyushu Inst. Tech.)

Keywords:resistive memories, initial states, switching modes

Resistive memories can be categorized to two switching modes by the types of conductive filament, valence change memory (VCM) and electrochemical memory (ECM), because the electrical characteristics are strongly depended on the material selection. Although these two modes were reported widely, a detailed comparison is still lacking. In this work, to compare the two switching modes for their initial states and switching behaviors, we systematically fabricated the insulator Ta₂O_5-δ and different top electrodes were applied to achieve the two modes.