First-principles analysis of oxygen vacancy behavior in rutile TiO<sub>2</sub> under external electric fields

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Thu. Mar 12, 2020 1:45 PM - 5:30 PM D411 (11-411)

Shoso Shingubara(Kansai Univ.), Shinya Aikawa(Kougakuin Univ.)

2:00 PM - 2:15 PM

〇(M2)Tsuyishi Isaka¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Akira Sakai¹ (1.Osaka Univ.)

Keywords:First principles calculations, TiO2, Memristor