The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[12p-D411-1~14] 6.3 Oxide electronics

Thu. Mar 12, 2020 1:45 PM - 5:30 PM D411 (11-411)

Shoso Shingubara(Kansai Univ.), Shinya Aikawa(Kougakuin Univ.)

2:15 PM - 2:30 PM

[12p-D411-3] Current-voltage characteristics and hydrogen impurity effect in Metals/Nb:SrTiO3 Schottky junctions

〇(B)Taisei Murakami1,2, Takumi Hosaka1,2, Takeo Ohsawa2, Takeshi Ogaki2, Shigenori Ueda2, Takamasa Ishigaki1, Naoki Ohashi2 (1.Hosei Univ., 2.NIMS)

Keywords:Resistive switching

Resistive random access memory (ReRAM) is primarily composed of a two-terminal structure using metal electrodes and transition-metal oxides. An external bias sweep to the devices enables resistance switching behaviors: a reversible change between high resistance state (HRS) and low resistance state (LRS). To illuminate more details for the mechanism, we investigate an impact of hydrogen impurity for Metals/Nb:SrTiO3(001) junctions and find that electronic states in the vicinity of the interfaces play a critical role in the resistive switching.