The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[12p-D411-1~14] 6.3 Oxide electronics

Thu. Mar 12, 2020 1:45 PM - 5:30 PM D411 (11-411)

Shoso Shingubara(Kansai Univ.), Shinya Aikawa(Kougakuin Univ.)

2:30 PM - 2:45 PM

[12p-D411-4] Hydrogen gas sensing properties of SnO2 thin films loaded with Pt-nanoparticle

〇(M2)Shuhei Nishikawa1, Makoto Kashiwagi1, Junjun Jia2, Akira Nakamura3, Yuzo Shigesato1 (1.Aoyama Gakuin Univ., 2.Waseda Univ., 3.MITSUMI ELECTRIC)

Keywords:hydrogen gas sensor, SnO2 thin film, sputtering

SnO2 has been reported as the functional oxide semiconductor, such as transparent conductive, IR reflecting or gas sensing films. In this study, SnO2 films were deposited at 300 °C by rf magnetron sputtering using a SnO2 ceramics target to apply for the hydrogen gas sensing devices. In addition, Pt nanoparticles were fabricated as the catalyst on the SnO2 film surfaces at RT by dc sputtering with a Pt target. For Pt deposited on the SnO2 films, a three-dimensional growth (the Volmer-Weber-type) mode is expected because the deposited atoms are bound more strongly to each other than to the substrate surface. The surface coverage of Pt was analyzed by XPS. In-situ hall effect analyses during the gas flow revealed that the changes in the resistivity of the films were mainly caused by the change in the carrier density. The enhancement of the hydrogen gas sensing properties at RT by the catalyst loadings was clearly observed.