[12p-D419-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [12p-D419-15] High current (0.78 A/mm) and high voltage (618 V) operation of NO₂-doped diamond MOSFETs

〇(D)Niloy Chandra Saha¹, Y. Kawamata², K. Koyama², S. -W. Kim², T. Oishi¹, M. Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

Keywords:heteroepitaxial diamond, Diamond MOSFET, NO2 doping

Diamond has excellent physical properties, such as the high breakdown field and high thermal conductivity over SiC and GaN. NO₂ p-type doping reached a sheet concentration up to ~1´10¹⁴ cm^-2 and Al₂O₃ passivation stabilized hole channel, which also serves as gate insulating layer. Using these technologies, diamond MOSFET with gate length, L_g= 0.4 µm was demonstrated with a high drain current of 1.3 A/mm. In this study, we fabricated diamond MOSFET, and a high drain current of 776 mA/mm and a high breakdown voltage of 618 V are obtained with L_g=1.4 µm.