[12p-D419-1~15] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▼ [12p-D419-15] High current (0.78 A/mm) and high voltage (618 V) operation of NO₂-doped diamond MOSFETs

〇(D)Niloy Chandra Saha¹、Y. Kawamata²、K. Koyama²、S. -W. Kim²、T. Oishi¹、M. Kasu¹ (1.Saga Univ.、2.Adamant Namiki Precision Jewel Co., Ltd.)

キーワード：heteroepitaxial diamond, Diamond MOSFET, NO2 doping

Diamond has excellent physical properties, such as the high breakdown field and high thermal conductivity over SiC and GaN. NO₂ p-type doping reached a sheet concentration up to ~1´10¹⁴ cm^-2 and Al₂O₃ passivation stabilized hole channel, which also serves as gate insulating layer. Using these technologies, diamond MOSFET with gate length, L_g= 0.4 µm was demonstrated with a high drain current of 1.3 A/mm. In this study, we fabricated diamond MOSFET, and a high drain current of 776 mA/mm and a high breakdown voltage of 618 V are obtained with L_g=1.4 µm.