[12p-PA1-1~18] 3.9 Terahertz technologies

[12p-PA1-5] Analysis of integrated terahertz patch antenna using nitride semiconductors

〇Kenta Kurahashi¹, Shin Miura¹, Keishiro Goshima¹, Masanori Nagase^2,3 (1.AIT, 2.AIST ESPRIT, 3.AIST GaN-OIL)

Keywords:Terahertz, GaN, Patch antenna

In recent years, compact output sources such as quantum cascade laser and resonant tunneling diode (RTD) using GaAs have been realized . Also, THz wave detection methods such as THz-TDS have been to be established. The purpose of this study is to produce RTD THz oscillators using gallium nitride (GaN), which nitride semiconductor have a wider bandgap than GaAs, and can achieve higher output. In this paper, we report an analysis of a patch antenna structure with a stripline and a electrodes.