[12p-PA1-1~18] 3.9 Terahertz technologies

[12p-PA1-6] Evaluation of Ni/n-GaN-based Schottky barrier diodes for THz receiver

〇Shin Miura¹, Kenta Kurahashi¹, Keishiro Goshima¹, Tokio Takahashi², Masanori Nagase^2,3 (1.AIT, 2.AIST ESPRIT, 3.AIST GaN-OIL)

Keywords:Terahertz, GaN, Schottky barrier diodes

In recent years, high speed wireless communication experiments using a GaAs resonance tunnel diode (RTD) THz oscillator and Schottky barrier diode (SBD) THz receiver using InP have been reported. The purpose of our research is to realize high performance THz device using nitride semiconductor (GaN), which have superior material properties such as wide band gap characteristics and epitaxial growth on Si substrate.In this papar, we report fabrication and evaluation of GaN based SBD towards the realization of THz receiver.