[13a-A205-1~6] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[13a-A205-6] Chemical bonding state of AlN film deposited in low gas pressure and low-temperature sputtering conditions

〇Yuuto Kawato¹, Mizuho Yoshizuka¹, Taisei Motomura², Tatsuo Tabaru², Masato Uehara², Tetsuya Okuyama¹ (1.NIT Kurume College, 2.AIST)

Keywords:sputtering, low gas pressure