[13a-A305-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[13a-A305-8] Effects of gate area reduction of silicon MOS quantum dot on RF reflectometry

〇Shimpei Nishiyama^1,2, Kimihiko Kato², Yongxun Liu², Takahiro Mori², Masaru Hirayama¹, Sinan Bugu¹, Raisei Mizokuchi¹, Tetsuo Kodera¹ (1.Tokyo Tech, 2.AIST)

Keywords:silicon, quantum information device, quantum dots